aug . 20 1 3 . rev 1 . 0 magnachip semiconductor ltd . 1 absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 100 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c i d 9 7 a t c =1 0 0 o c 6 1 pulsed drain current i dm 38 4 power dissipation t c =25 o c p d 15 7 w t c =100 o c 6 3 single pulse avalanche energy e as (2) 180 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rati ng unit thermal resistance, junction - to - ambient (1) r ja 62.5 o c/w thermal resistance, junction - to - case r jc 0.8 md p1922 single n - channel trench m osfet 10 0v, 9 7 a, 8. 4 m features ? v ds = 10 0v ? i d = 9 7 a @v gs = 10v ? r ds(on) < 8. 4 m @v gs = 10v ? 100% uil tested ? 100% rg tested general description the md p1922 uses advanced magnachip s mosfet technology, which provides hi gh performance in on - state resistance, fast switching performance and excellent quality . MDP1922 is suitable device for dc/dc converter and general purpose applications. to - 220 d g s
aug . 20 1 3 . rev 1 . 0 magnachip semiconductor ltd . 2 ordering information part number temp. range package packing ro hs status MDP1922th - 55~150 o c to - 220 tube halogen free electric al characteristics (t j =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 2 .9 4.0 drain cut - off current i dss v ds = 80 v, v gs = 0v - - 1.0 a gate leakage current i gss v gs = 20v, v ds = 0v - - 0.1 drain - source on resistance r ds(on) v gs = 10v, i d = 50 a - 7. 0 8. 4 m ? forward transconductance g fs v ds = 10 v, i d = 50 a - 60 - s dynamic characteristics total gate charge q g v ds = 5 0 v, i d = 50 a, v gs = 10v - 54.5 - nc gate - source charge q gs - 16.4 - gate - drain charge q gd - 10.3 - input capacitance c iss v ds = 40 v, v gs = 0v, f = 1.0mhz - 3500 - pf reverse tran sfer capacitance c rss - 16 - output capacitance c oss - 720 - turn - on delay time t d(on) v gs = 10v, v ds = 5 0 v, i d = 50 a , r g = 3.0 - 13.8 - ns rise time t r - 1 3.0 - turn - off delay time t d(off) - 39.0 - fall time t f - 14.0 - gate resistance rg f=1 mhz - 2.5 - drain - source body diode characteristics source - drain diode forward voltage v sd i s = 50 a, v gs = 0v - 0.9 1.2 v body diode reverse recovery time t rr i f = 50 a, dl/dt = 15 0a/s - 6 2.0 ns body diode reverse recovery charge q rr - 197.0 nc note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7). continuous current at t c =25 is silicon limi ted 2. e as is tested at starting tj = 25 , l = 1 . 0 mh, i as = 19 .0 a, v gs = 10v .
aug . 20 1 3 . rev 1 . 0 magnachip semiconductor ltd . 3 fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - r esistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0 1 2 3 4 5 6 7 8 0 20 40 60 80 t c = 25 o c notes : v ds = 10 v i d drain current [a] v gs , gate-source voltage [v] 0.0 0.3 0.6 0.9 1.2 1.5 0 10 20 30 40 50 60 70 80 notes : v gs = 0v t c = 25 i dr reverse drain current [a] v sd , source-drain voltage [v] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 50 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 notes : i d = 50a t a = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 0 20 40 60 80 100 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3 7.4 v gs = 10v drain-source on-resistance [m ? ] i d , drain current [a] 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 160 180 200 7.0 v 8.0 v 10 v 5.0 v 6.0 v 4.5 v 4.0 v i d drain current [a] v ds , drain-source voltage [v]
aug . 20 1 3 . rev 1 . 0 magnachip semiconductor ltd . 4 fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current v s. case temperature fig.11 transient thermal response curve 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 110 120 i d , drain current [a] t c , case temperature [ ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 -4 10 -3 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 35 40 0 1000 2000 3000 4000 5000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 10 20 30 40 50 60 0 2 4 6 8 10 v ds = 50v note : i d = 50a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 ms dc 100 us operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v]
aug . 20 1 3 . rev 1 . 0 magnachip semiconductor ltd . 5 package dimension 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
aug . 20 1 3 . rev 1 . 0 magnachip semiconductor ltd . 6 disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfuncti on of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves t he right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magna chip semiconductor ltd.
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